Investigation of Transport Modeling for Plasma Waves in THz Devices

Investigation of Transport Modeling for Plasma Waves in THz Devices
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太赫兹器件中等离子体波传输模型的研究

DOI:
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发表时间:
2016
影响因子:
3.1
通讯作者:
C. Jungemann
C. Jungemann
中科院分区:
工程技术2区
文献类型:
--
作者:
Z. Kargar;Tobias Linn;Dino Ruić;C. Jungemann

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用于检测和生成太赫兹波的电子设备的性能可能会通过等离子体波引起的共振或不稳定性得到改善。这些设备的分析建模基于非常简单的传输模型,其准确性是通过与玻尔兹曼传输方程(BTE)的数值解进行系统比较来评估的。为此,BTE 被线性化并求解任意频率和波数的等离子体波。比较表明,简单的传输模型甚至无法捕获重要频率/波数范围内传输的最显着方面,并且需要更好的模型来可靠地预测太赫兹器件的性能。
The performance of electronic devices for the detection and generation of THz waves might be potentially improved by resonances or instabilities due to plasma waves. The analytical modeling of these devices is based on very simple transport models, of which the accuracy is assessed by a systematic comparison with numerical solutions of the Boltzmann transport equation (BTE). To this end, the BTE is linearized and solved for plasma waves of arbitrary frequency and wave number. The comparison reveals that the simple transport models fail to capture even the most salient aspects of transport in the important frequency/wave number range and better models are required for reliable prediction of the performance of THz devices.
耦合二维半导体谐振器中的太赫兹等离子体激元
DOI: 10.1103/physrevb.92.195304
发表时间: 2015
期刊: Physical Review B
影响因子: 3.7
作者:
Sydoruk O
通讯作者: Sydoruk O
通过确定性求解器对 GaAs 器件的泊松、薛定谔和玻尔兹曼方程进行自洽解
DOI: 10.1109/sispad.2015.7292334
发表时间: 2015
期刊: 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
影响因子: --
作者:
Z. Kargar;D. Ruić;C. Jungemann
通讯作者: C. Jungemann