Topological Dirac nodal loops in nonsymmorphic hydrogenated monolayer boron
Topological Dirac nodal loops in nonsymmorphic hydrogenated monolayer boron
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DOI：
10.1103/physrevb.101.195412
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发表时间：
2020-05-07
影响因子：
3.7
通讯作者：
Matsuda, I
中科院分区：
文献类型：
--
作者：
Cuong, N. T.;Tateishi, I;Matsuda, I
对于具有非对称对称性的氢化单层硼片，预测了存在拓扑Dirac节点环。硼化合物中的三中心两电子键限制了电子系统的绝缘性或带有狄拉克节点环的半金属。用Z(2)拓扑指数区分了两种电子结构，并用第一性原理总能计算证实了这两种电子结构。本研究建立的拓扑分类方法可应用于其他二维材料，寻找新的狄拉克费米子。
The existence of a topological Dirac nodal loop is predicted for hydrogenated monolayer boron sheets with a nonsymmorphic symmetry. The three-center two-electron bonds in boron compounds restrict the electronic system to be insulating or semimetallic with a Dirac nodal loop. Two types of electronic structures are distinguished by the Z(2) topological index and confirmed by first-principles total-energy calculations. The topological taxonomy, developed in this research, can be applied to other two-dimensional materials and to seek novel Dirac fermions.