A Bidirectional Buck-boost Converter Using 1.3kV Series-Stacked GaN E-HEMT Modules for Electric Vehicle Charging Application
A Bidirectional Buck-boost Converter Using 1.3kV Series-Stacked GaN E-HEMT Modules for Electric Vehicle Charging Application
复制标题
用于电动汽车充电应用的使用 1.3kV 串联堆叠 GaN E-HEMT 模块的双向降压-升压转换器
DOI：
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发表时间：
2018
期刊：
影响因子：
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通讯作者：
O. Mohammed
中科院分区：
文献类型：
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作者：
Mehdi Shojaie;N. Elsayad;Solale Tabarestani;O. Mohammed
提出了一种基于串联堆叠GaN增强型高电子迁移率晶体管（E-HEMT）模块的全氮化镓（GaN）双向降压-升压转换器，用于电动汽车（EV）充电应用。提出了一种用于控制串联GaN HEMT的串联开关驱动器（SSD）。在该电路中，使用单栅极驱动器电源。所提出的栅极驱动器的功能是为器件提供所需的栅极电荷，并确保器件之间的导通和关断同步。推导了串联堆叠GaN HEMT（GaN模块）的数学模型沿着所设计的栅极驱动器。在该模型中，还考虑了寄生电感，并计算了开关损耗。仿真和实验结果验证了理论分析的正确性。
In this paper, an all-Gallium Nitride (GaN) bidirectional buck-boost converter using series stacked GaN Enhancement High Electron Mobility Transistor (E-HEMT) modules for Electric Vehicle (EV) charging application is proposed. A Series Switch Driver (SSD) is proposed for controlling series-connected GaN HEMTs. In this circuit, a single gate driver supply is used. The function of the proposed gate driver is to provide the required gate charge for the devices and ensure turn-on and off synchronization between the devices. A mathematical model is derived for the series-stacked GaN HEMTs (GaN module) along with the designed gate driver. In this model, the parasitic inductors are also considered and the switching loss is calculated. Simulation and experimental results of the proposed converter validate the theoretical analysis.