Electron and hole mobilities at a Si/SiO2 interface with giant valley splitting
Electron and hole mobilities at a Si/SiO2 interface with giant valley splitting
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DOI：
10.1063/1.4803014
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发表时间：
2013-05-13
影响因子：
4
通讯作者：
Hirayama, Yoshiro
中科院分区：
文献类型：
--
作者：
Niida, Yoshitaka;Takashina, Kei;Hirayama, Yoshiro
我们研究了硅/埋氧化物（BOX）界面上的电子迁移率和空穴迁移率，其中电子系统的谷分裂被强烈增强，并将观察到的值与相同硅绝缘体上的标准硅/热氧化物（T-SiO2）界面的观测值进行了比较。与Si/BOX界面的电子迁移率较低相反，Si/BOX界面的空穴迁移率略高于Si/T-SiO2界面。(C) 2013 AIP出版有限责任公司
We examine the electron mobility and hole mobility at the Si/buried oxide (BOX) interface at which the valley splitting of the electron system is strongly enhanced, and compare the values observed to those at a standard Si/thermal oxide (T-SiO2) interface in the same silicon-on-insulator device. In contrast to the electron mobility, which is lower at the Si/BOX interface, the hole mobility at the Si/BOX interface is found to be slightly higher than that at the Si/T-SiO2 interface. (C) 2013 AIP Publishing LLC