Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices
Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices
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DOI：
10.4028/www.scientific.net/msf.924.184
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发表时间：
2018-06
期刊：
影响因子：
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通讯作者：
J. Weiße;Martin Hauck;T. Sledziewski;Mattias Tschiesche;M. Krieger;A. Bauer;H. Mitlehner;L. Frey;T. Erlbacher
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文献类型：
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作者：
J. Weiße;Martin Hauck;T. Sledziewski;Mattias Tschiesche;M. Krieger;A. Bauer;H. Mitlehner;L. Frey;T. Erlbacher
在这项工作中，我们分析了将铝 (Al) 注入 n 型 4H-SiC 外延层并随后进行热退火后形成的补偿缺陷。对于 [Al]impl ≈ 9·1016 cm-3 的低掺杂层，这些缺陷将预期自由载流子密度降低了 84%；对于 [Al]impl ≈ 2·1019 cm-3 的高掺杂层，这些缺陷降低了 27%。此外，计算出注入的铝离子的电激活率为100％。通过霍尔效应和导纳光谱测量注入铝的电离能范围为 101 meV 至 305 meV，具体取决于掺杂浓度。
In this work, we analyze compensating defects which are formed after implantation of aluminum (Al) into n-type 4H-SiC epitaxial layers and subsequent thermal annealing. These defects reduce the expected free charge carrier density by 84% for a low doped layer with [Al]impl ≈ 9·1016 cm-3 and by 27 % for a high doped layer with [Al]impl ≈ 2·1019 cm-3. Furthermore, an electrical activation ratio of implanted aluminum ions of 100 % is calculated. The ionization energy of implanted aluminum as measured by Hall effect and admittance spectroscopy ranges from 101 meV to 305 meV depending on the doping concentration.