Crystallization Behavior of Zinc-Doped Nb 2 O 5 Thin Films Synthesized by Atomic Layer Deposition
Crystallization Behavior of Zinc-Doped Nb 2 O 5 Thin Films Synthesized by Atomic Layer Deposition
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原子层沉积法合成锌掺杂Nb 2 O 5 薄膜的结晶行为
DOI：
10.1021/acsaelm.2c00446
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发表时间：
2022
影响因子：
4.7
通讯作者：
Michels, James H.
中科院分区：
文献类型：
--
作者：
Kozen, Alexander C.;Woodward, Jeffrey M.;Ruppalt, Laura B.;Cho, Hans;Ventrice, Carl A.;Rowley, Andrew H.;Zhe, Nicole;Mesiti, Alex;Sargent, Emma;Michels, James H.
由忆阻材料构建的神经形态计算设备提供了一条潜在的途径，可以在合并的仿生和CMOS架构中提高功率和计算效率。这种框架的关键是开发能够可靠地设计成神经形态器件并与CMOS平台集成的材料。二氧化铌具有挥发性忆阻特性，使其成为未来神经形态电子学的理想候选者。在这项研究中，我们热结晶和减少薄膜的非晶氧化铌（Nb2O5）的沉积与原子层沉积。我们发现，掺杂的沉积铌氧化物与锌导致较低的初始结晶温度，这是一个必要的步骤，神经形态集成与CMOS器件，具有严格的热预算。
Neuromorphic computational devices built from memristive materials provide a potential path toward improved power and computational efficiency in a merged biomimetic and CMOS architecture. The key to such a framework is developing materials that can be reliably engineered into neuromorphic devices and integrated with CMOS platforms. Niobium dioxide has volatile memristive properties that make it an ideal candidate for future neuromorphic electronics. In this study, we thermally crystallized and reduced thin films of amorphous niobium oxide (Nb2O5) that were deposited with atomic layer deposition. We found that doping the as-deposited niobium oxide with zinc led to a lower initial crystallization temperature, which is a necessary step toward neuromorphic integration with CMOS devices that have a strict thermal budget.