A reappraisal of instabilities due to the transferred electron effect
A reappraisal of instabilities due to the transferred electron effect
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DOI：
10.1088/0022-3719/6/10/012
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发表时间：
1973-05
期刊：
影响因子：
--
通讯作者：
D. Jones;H. Rees
中科院分区：
文献类型：
--
作者：
D. Jones;H. Rees
用数值方法求解空间变化条件下半导体中电子的Boltzmann方程，研究了转移电子效应引起的不稳定性特征。对于累积层和偶极磁区，主要特征与现有理论的预测总体上是定性一致的，但在这两种情况下，电子弛豫效应在决定不稳定性的速度及其增长和衰减特性方面具有重要的定量意义。
A numerical method for solving the Boltzmann equation for electrons in a semiconductor under spatially varying conditions has been used to investigate the characteristics of instabilities due to the transferred electron effect. For both accumulation layers and dipole domains the main features are in overall qualitative agreement with the predictions of existing theories, but in both cases electron relaxation effects are quantitatively significant in determining the velocities of the instabilities and their growth and decay characteristics.