Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes
Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes
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DOI：
10.1109/tns.2019.2955922
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发表时间：
2020-01
影响因子：
1.8
通讯作者：
D. Ball;J. M. Hutson;A. Javanainen;J. Lauenstein;K. Galloway;R. A. Johnson;M. Alles;A. Sternberg-A.-Sternbe
中科院分区：
文献类型：
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作者：
D. Ball;J. M. Hutson;A. Javanainen;J. Lauenstein;K. Galloway;R. A. Johnson;M. Alles;A. Sternberg-A.-Sternbe
Heavy-ion data suggest that a common mechanism is responsible for single-event burnout (SEB) in 1200-V power MOSFETs and junction barrier Schottky (JBS) diodes. Similarly, heavy-ion data suggest a common mechanism is also responsible for leakage current degradation in both devices. This mechanism, based on ion-induced, highly localized energy pulses, is demonstrated in simulations and shown to be capable of causing degradation and SEB for both the MOSFETs and JBS diodes.
