Strain control of GaN grown on 3C-SiC/Si substrate using AlGaN buffer layer
Strain control of GaN grown on 3C-SiC/Si substrate using AlGaN buffer layer
复制标题
使用 AlGaN 缓冲层对 3C-SiC/Si 衬底上生长的 GaN 进行应变控制
DOI：
10.1002/pssc.201100332
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
K.Kawamura
中科院分区：
文献类型：
--
作者：
H.Fang;Y.Takaya;S.Ohuchi;H.Miyake;K.Hiramatsu;H.Asamura;K.Kawamura
采用低压金属有机物气相外延（LP-MOVPE）技术，在3C-SiC/Si衬底上生长了不同厚度和AlN摩尔分数的AlGaN中间层，并在此基础上制备了GaN层。通过改变AlGaN的厚度和Al摩尔分数，系统研究了中间层对GaN外延层晶体质量和应变状态的影响。拉曼散射和X射线衍射结果表明，较薄的AlGaN层和较高的Al摩尔分数可以改善GaN外延层的结晶质量，同时减小应变。这种现象应归因于GaN外延初始阶段的三维（3D）生长。（© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
GaN layers were grown on 3C‐SiC/Si substrates with AlGaN intermediate layers with various thickness and AlN mole fraction by low‐pressure metal‐organic vapor phase epitaxy (LP‐MOVPE). The effects of the interlayer on the crystal quality and strain‐status of GaN epilayer were investigated systematically by varing the thickness and the Al mole fraction of the AlGaN. Raman scattering and X‐ray diffraction results show that the AlGaN with thinner thickness and higher Al mole fractions can improve the crystalline quality of the GaN epilayer and the redue the strain at the same time. This phenomenon should be attributed to three dimensional (3D) growth at the initial stage of (the) GaN epitaxy. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)