Excellent wet etching technique using pulsed anodic oxidation for homoepitaxially grown GaN layer
Excellent wet etching technique using pulsed anodic oxidation for homoepitaxially grown GaN layer
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使用脉冲阳极氧化进行同质外延生长 GaN 层的出色湿法蚀刻技术
DOI：
10.7567/jjap.57.086502
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发表时间：
2018
影响因子：
1.5
通讯作者：
Takehiro Yoshida
中科院分区：
文献类型：
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作者：
F. Horikiri;Yoshinobu Narita;Takehiro Yoshida
在独立GaN衬底上含有GaN同质外延层的垂直器件中，无损伤沟槽制造是器件工艺中的关键问题。我们使用位错密度为106 cm−2的独立GaN衬底，并对同质外延生长的n−-GaN层进行脉冲光电化学（PEC）蚀刻。虽然报道的蓝宝石上GaN的结果显示出由108至109 cm-2范围内的高位错密度引起的差的蚀刻均匀性，但是通过脉冲PEC蚀刻获得的GaN上GaN的蚀刻表面在低蚀刻电压下几乎是平坦的。光致发光强度表明，刻蚀表面没有刻蚀损伤。此外，我们成功地获得了湿蚀刻梅萨二极管的高击穿电压超过3千伏和高产率。这些结果表明，脉冲PEC蚀刻的适用性，使用低位错密度GaN衬底的垂直GaN功率器件的无损伤沟槽制造。
In vertical devices containing GaN homoepitaxial layers on free-standing GaN substrates, damageless trench fabrication is a key issue in device processes. We used a free-standing GaN substrate with a dislocation density of 106 cm−2 and applied pulsed photo-electrochemical (PEC) etching to a homoepitaxially grown n−-GaN layer. Although the reported results of GaN-on-sapphire show poor etching uniformity caused by the high dislocation density in the range of 108 to 109 cm−2, the etched surface of GaN-on-GaN obtained by pulsed PEC etching was almost flat at a low etching voltage. The photoluminescence intensity indicated that the etched surface does not have etching damage. Furthermore, we successfully obtained wet-etched mesa diodes with a high breakdown voltage of more than 3 kV and a high yield. These results indicate the applicability of pulsed PEC etching to the damageless trench fabrication of vertical GaN power devices using low-dislocation-density GaN substrates.
高电场对GaN多孔结构光吸收性能的影响
DOI：
--
发表时间：
2015
期刊：
影响因子：
--
作者：
T. Sato;Y. Kumazaki;Z. Yatabe
通讯作者：
Z. Yatabe