Avalanche Photodiodes Based on the AlInAsSb Materials System
Avalanche Photodiodes Based on the AlInAsSb Materials System
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DOI：
10.1109/jstqe.2017.2737880
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发表时间：
2018-03-01
影响因子：
4.9
通讯作者：
March, Stephen D.
中科院分区：
文献类型：
--
作者：
Bank, Seth R.;Campbell, Joe C.;March, Stephen D.
我们报告雪崩光电二极管（APD）制造的高铝含量的Al-x In 1-x As-y Sb 1-y晶格匹配的GaSb，是使用数字合金的方法生长的可扩展性间隙内。该材料最初通过一系列Al-xIn 1-xAs-ySb 1-y（x = 0.3，0.4，0.5，0.6，0.7）p-i-n结构表征。为了实现在电信波长的操作，Al-x In 1-x As-y Sb 1-y分离的吸收，充电，和倍增APD已被开发。已经实现了非常低的过量噪声，其特征在于k类似于0.01-0.05。
We report avalanche photodiodes (APDs) fabricated from high-aluminum-content Al-x In1-x As-y Sb1-y lattice matched to GaSb that is grown within the miscibility gap using a digital alloy approach. The material was initially characterized through a series of Al-x In1-x As-y Sb1-y (x = 0.3, 0.4, 0.5, 0.6, 0.7) p-i-n structures. In order to achieve operation at telecommunications wavelengths, an Al-x In1-x As-y Sb1-y separate absorption, charge, and multiplication APD has been developed. Very low excess noise, as characterized by k similar to 0.01-0.05, has been achieved.