Solution-processed carbon electrodes for organic field-effect transistors
Solution-processed carbon electrodes for organic field-effect transistors
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DOI：
10.1063/1.3037226
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发表时间：
2008-11
影响因子：
4
通讯作者：
H. Wada;Takehiko Mori
中科院分区：
文献类型：
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作者：
H. Wada;Takehiko Mori
采用表面选择性沉积技术，在紫外光照射去除自组装单分子膜的区域沉积碳糊溶液，制备了具有碳糊电极的底接触有机晶体管。由此得到的底接触并五苯晶体管实现了1.0cm2V−1S−1的高性能。本方法适用于溶液处理的聚噻吩管和n沟道材料。
Bottom-contact organic transistors with carbon-paste electrodes are fabricated by means of the surface selective deposition technique, where a carbon-paste solution is deposited on the region in which the self-assembled monolayers are removed by ultraviolet light irradiation. The resulting bottom-contact pentacene transistor realizes high performance of 1.0cm2V−1s−1. The present method is applied to solution-processed polythiophene transistors as well as n-channel materials.