Improved electrical performance of solution-processed zinc oxide-based thin-film transistors with bilayer structures
Improved electrical performance of solution-processed zinc oxide-based thin-film transistors with bilayer structures
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DOI：
10.1080/15980316.2021.2011443
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发表时间：
2021-12
影响因子：
3.7
通讯作者：
Kazuyori Oura;H. Wada;Masatoshi Koyama;T. Maemoto;S. Sasa
中科院分区：
文献类型：
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作者：
Kazuyori Oura;H. Wada;Masatoshi Koyama;T. Maemoto;S. Sasa
采用溶液法制备了氧化锌和铝掺杂氧化锌双层薄膜晶体管(TFT)结构。控制了氧化锌和氮氧化锌的薄膜厚度和烧结气氛，并通过测量其电学特性对其进行了评价。通过改变烧结气氛，薄膜中氧空位引起的载流子增多。此外，在氮气中烧结的氧化锌单层TFT具有良好的电学性能。在氮气中烧结的氧化锌和高阻AZO薄膜层叠的ZnO/AZO双层TFT中，开关比和亚阈值摆动等电学特性比ZnO-TFT有所改善。在氧气气氛下烧结的AZO薄膜的通断比显著提高到3.7×105，而使用AZO-TFT的通断比仅为1.7×104。此外，该薄膜的亚阈值摆幅为0.36V/dec，场效应迁移率为2.2x10−1cm2/vs，表现出最佳的电学性能。掠入射X-射线衍射仪测试表明，双层膜的颗粒尺寸和结晶度均高于单层膜。因此，电学特性的改善是肯定的。
A bilayer thin-film transistor (TFT) structure with ZnO and Al-doped ZnO (AZO) was fabricated using a solution process. The film thickness and sintering atmosphere of ZnO and AZO were controlled and then evaluated by measuring their electrical characteristics. By changing the sintering atmosphere, carriers attributed to oxygen vacancies in the thin film increased. Moreover, the ZnO single-layer TFT sintered in N2 exhibited good electrical characteristics. In the ZnO/AZO bilayer TFT laminated with the ZnO sintered in N2 and high-resistance AZO thin films, electrical characteristics, such as the On/Off ratio and subthreshold swing, improved compared to those of the ZnO-TFT. The On/Off ratio of the ZnO/AZO-TFT using the AZO thin film sintered in an O2 atmosphere notably improved to 3.7 × 105 compared to that of the ZnO-TFT (1.7 × 104). In addition, the subthreshold swing in the ZnO/AZO-TFT was 0.36 V/dec, while the field-effect mobility was 2.2 × 10−1 cm2/Vs, thereby exhibiting the best electrical characteristics among the fabricated samples. According to the grazing-incidence X-ray diffraction measurement, the ZnO particle size and crystallinity of the ZnO/AZO bilayer were higher than those of the ZnO single layer. Therefore, improvement of the electrical characteristics was confirmed.