Deposition conditions and composition and structure relationships for nitride carbon films obtained by ECR plasma-assisted CVD and reactive rf magnetron sputtering
Deposition conditions and composition and structure relationships for nitride carbon films obtained by ECR plasma-assisted CVD and reactive rf magnetron sputtering
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ECR等离子体辅助CVD和反应射频磁控溅射氮化碳薄膜的沉积条件及成分和结构关系
DOI：
10.1016/s0257-8972(99)00478-8
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发表时间：
2000
影响因子：
5.4
通讯作者：
A. Onoprienko
中科院分区：
文献类型：
--
作者：
L. Jastrabík;L. Soukup;L. Shaginyan;A. Onoprienko
采用ECR等离子体辅助化学气相沉积（PACVD）和射频反应磁控溅射法制备了氢化氮化碳和氮化碳薄膜。薄膜成分（N/C比），生长速率（Vg）和显微硬度H取决于类型（直流或射频）和0至− 200 V范围内的衬底偏压水平。结果表明，离子轰击影响了氮化碳薄膜沉积过程中的成分和生长速率。当射频偏置电压增加到− 200 V时，Vgup会下降到零，而N/C对射频偏置值的依赖关系在−130 V到− 150 V处出现峰值。两种膜类型的拉曼光谱分析表明，成膜团簇的尺寸减小，并且随着离子轰击强度的增加，原子同时向石墨状结构排列。从Vg，N/C和拉曼光谱行为的离子轰击特性的变化的相似性，可以得出结论，离子轰击效应揭示了两种本质上不同的沉积方法的共同特征，而这些沉积技术的薄膜生长机制是强烈不同的，并大大影响薄膜的组成和生长速率。CNxHyfilms的显微硬度随着离子轰击强度的增加而增加，但不超过7000 N/mm 2。这些效应与离子轰击下薄膜微结构的演化和成膜团簇中化学键的sp2性质有关。
Hydrogenated carbon nitride and carbon nitride films were deposited by ECR plasma-assisted CVD (PACVD) and rf reactive magnetron sputtering. Film composition (N/C ratio), growth rate (Vg) and microhardness H were investigated depending on the type (dc or rf) and the level of substrate bias in the range 0 to −200V. As was revealed, the ion bombardment influences the composition and growth rate of carbon nitride films during their deposition. An increase in rf bias voltage up to −200V results in a decrease in Vgup to zero, while the dependence of N/C on rf bias value reveals a peak at about −130 to −150V. Analysis of Raman spectra for both film types indicates a decrease in size of the film-forming clusters and simultaneous arrangement of atoms towards graphite-like structure with increasing ion bombardment intensity. From the resemblance of Vg, N/C and Raman spectra behavior to the variation in ion bombardment characteristics, it can be concluded that the ion bombardment effect reveals common features for two essentially different deposition methods, whereas the film growth mechanisms are strongly different for these deposition techniques and substantially influence the composition and growth rate of the films. The microhardness of CNxHyfilms increased with increasing ion bombardment intensity, but did not exceed 7000N/mm2. These effects are related to the film microstructure evolution under the ion bombardment and sp2nature of the chemical bonds in the film-forming clusters.