Temperature dependence of electrical conductance in single-crystalline boron nanobelts
Temperature dependence of electrical conductance in single-crystalline boron nanobelts
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DOI：
10.1063/1.1935036
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发表时间：
2005-05
影响因子：
4
通讯作者：
K. Kirihara;Z. Wang;Kenji Kawaguchi;Y. Shimizu;T. Sasaki;N. Koshizaki;K. Soga;K. Kimura
中科院分区：
文献类型：
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作者：
K. Kirihara;Z. Wang;Kenji Kawaguchi;Y. Shimizu;T. Sasaki;N. Koshizaki;K. Soga;K. Kimura
我们研究了具有α-四方晶体结构的单晶硼纳米带中的电输运。我们用Ni/Au双层膜的金属电极实现了与硼纳米带的欧姆接触。从电导对温度的依赖关系可以看出，硼纳米带是半导体的。295K时的电导率为10−3(Ωcm)−1数量级，与变程跳跃电导的拟合结果表明，与块体β-菱面体相比较，在费米能级上有较高的局域态密度。
We studied electrical transport in single-crystalline boron nanobelts with α-tetragonal crystalline structure. We obtained ohmic contacts to the boron nanobelts by metal electrodes of Ni∕Au bilayer. From the temperature dependence of electrical conductance, we found that the boron nanobelt is a semiconductor. The electrical conductivity was of the order of 10−3(Ωcm)−1 at 295 K. Fitting the results to variable-range-hopping conduction revealed a high density of localized states at the Fermi level compared with bulk β-rhombohedral boron.