Field emission from nanotube bundle emitters at low fields
Field emission from nanotube bundle emitters at low fields
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DOI：
10.1063/1.119146
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发表时间：
1997-06-16
影响因子：
4
通讯作者：
Krauss, AR
中科院分区：
文献类型：
--
作者：
Wang, QH;Corrigan, TD;Krauss, AR
描述了起始场低至0.8V/μ m的纳米管场发射体的制备，并讨论了低场电子发射机理。这些发射器是使用添加环氧树脂的纳米管阴极存款。保持了存款的纳米管束中纳米管的优选取向。通过将纳米管束表面暴露于微波氧等离子体来锐化纳米管尖端。利用Fowler-Nordheim方程估计了局域场增强因子为8000。低起始场归因于样品表面处的分布良好的、高度取向的尖锐尖端。(C)1997年美国物理学会。
The fabrication of nanotube field emitters with an onset field as low as 0.8 V/mu m is described and the low-field electron emission mechanism is discussed. These emitters are made using nanotube cathode deposit with the addition of epoxy resin. The preferred orientation of nanotubes in nanotube bundles of the deposit is preserved. The nanotube tips are sharpened by exposing the nanotube bundle surface to a microwave oxygen plasma. The local-field enhancement factor is estimated to be 8000 by using the Fowler-Nordheim equation. The low onset field is attributed to the well-distributed, highly orientated sharp tips at the sample surface. (C) 1997 American Institute of Physics.