Electron-pinned defect-dipoles for high-performance colossal permittivity materials
Electron-pinned defect-dipoles for high-performance colossal permittivity materials
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DOI：
10.1038/nmat3691
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发表时间：
2013-09-01
期刊：
影响因子：
41.2
通讯作者：
Wong-Leung, Jennifer
中科院分区：
文献类型：
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作者：
Hu, Wanbiao;Liu, Yun;Wong-Leung, Jennifer
巨电容率（CP）材料在现代微电子学和高能量密度存储应用中的巨大潜力推动了最近的研究和开发。尽管发现了几种新的CP材料，但开发具有所需高性能的此类材料仍然是一项极具挑战性的任务。在这里，我们提出了一种新的电子钉扎，缺陷偶极子路线理想的CP行为，跳跃电子被指定的晶格缺陷状态本地化，产生巨大的缺陷偶极子，并导致高性能的CP材料。我们提出了一个具体的例子，（Nb + In）共掺杂的TiO2金红石，它表现出很大程度上与温度和频率无关的巨大介电常数（>10（4））以及低介电损耗（主要是
The immense potential of colossal permittivity (CP) materials for use in modern microelectronics as well as for high-energy-density storage applications has propelled much recent research and development. Despite the discovery of several new classes of CP materials, the development of such materials with the required high performance is still a highly challenging task. Here, we propose a new electron-pinned, defect-dipole route to ideal CP behaviour, where hopping electrons are localized by designated lattice defect states to generate giant defect-dipoles and result in high-performance CP materials. We present a concrete example, (Nb + In) co-doped TiO2 rutile, that exhibits a largely temperature-and frequency-independent colossal permittivity (>10(4)) as well as a low dielectric loss (mostly