In-situ characterization of trapped charges in amorphous semiconductor films during plasma-enhanced chemical vapor deposition
In-situ characterization of trapped charges in amorphous semiconductor films during plasma-enhanced chemical vapor deposition
复制标题
等离子体增强化学气相沉积过程中非晶半导体薄膜中俘获电荷的原位表征
DOI：
10.1063/1.4895345
复制
发表时间：
2014
期刊：
影响因子：
1.6
通讯作者：
I. Sakata
中科院分区：
文献类型：
--
作者：
S. Nunomura;I. Sakata
在等离子体增强化学气相沉积过程中测量了氢化非晶硅薄膜的亚带隙吸收电流。电流由近红外激光探测，而光激发载流子在可见光照射下产生。在载流子产生和复合动力学的假设下，陷阱电荷密度由电流的大小决定。结果表明，薄膜在生长过程中陷阱电荷分布均匀，生长后陷阱电荷减少。当生长温度为≈473K时，陷阱电荷密度最小。
The subband-gap absorption current in a hydrogenated amorphous silicon film has been measured during plasma-enhanced chemical vapor deposition. The current is probed by a near-infrared laser while photoexcited carriers are generated under visible laser illumination. The trapped charge density is determined from the magnitude of current under the assumption of carrier generation and recombination kinetics. The result indicates that trapped charges are distributed uniformly in the film during growth, and they are reduced after the growth. The trapped charge density is minimized at a growth temperature of ≈ 473 K.