Structural, electronic, and dielectric properties of ultrathin zirconia films on silicon
Structural, electronic, and dielectric properties of ultrathin zirconia films on silicon
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DOI：
10.1063/1.1864235
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发表时间：
2005-04
影响因子：
4
通讯作者：
S. Sayan;N. Nguyen;J. Ehrstein;T. Emge;E. Garfunkel;M. Croft;Xinyuan Zhao;D. Vanderbilt;I. Levin;E. Gusev;Hyoungsub Kim;P. J. McIntyre
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文献类型：
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作者：
S. Sayan;N. Nguyen;J. Ehrstein;T. Emge;E. Garfunkel;M. Croft;Xinyuan Zhao;D. Vanderbilt;I. Levin;E. Gusev;Hyoungsub Kim;P. J. McIntyre
随着高介电常数电介质在金属 - 氧化物 - 半导体场效应晶体管生产中的应用日益临近，人们正在严格探究对其介电特性以及由其制成的结构的电容的原子层面的理解。我们及其他研究人员已经表明，ZrO₂薄膜的晶体结构对介电常数以及带隙都有相当大的影响。此处所报道的沉积态薄膜在临界厚度（约5.4纳米）以下呈现非晶态，并且在退火时转变为以四方相为主的相态。在厚度大得多的情况下，稳定的单斜相将更受青睐。这些相变可能对沟道迁移率有显著影响。
As high-permittivity dielectrics approach use in metal-oxide-semiconductor field-effect transistor production, an atomic level understanding of their dielectric properties and the capacitance of structures made from them is being rigorously pursued. We and others have shown that crystal structure of ZrO2 films have considerable effects on permittivity as well as band gap. The as-deposited films reported here appear amorphous below a critical thickness (∼5.4nm) and transform to a predominantly tetragonal phase upon annealing. At much higher thickness the stable monoclinic phase will be favored. These phase changes may have a significant effect on channel mobility.