Radiation-Induced Soft Error Rates of Advanced CMOS Bulk Devices
Radiation-Induced Soft Error Rates of Advanced CMOS Bulk Devices
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DOI：
10.1109/relphy.2006.251220
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发表时间：
2006-03
期刊：
影响因子：
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通讯作者：
N. Seifert;P. Slankard;M. Kirsch;B. Narasimham;V. Zia;C. Brookreson;A. Vo;S. Mitra;B. Gill;J. Maiz
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文献类型：
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作者：
N. Seifert;P. Slankard;M. Kirsch;B. Narasimham;V. Zia;C. Brookreson;A. Vo;S. Mitra;B. Gill;J. Maiz
这项工作提供了一个全面的总结辐射引起的软错误率（SER）缩放趋势的关键CMOS体器件。具体来说，我们分析了SRAM，时序和静态组合逻辑的每比特SER缩放趋势。我们的研究结果表明，对于SRAM的单位软错误率继续下降，而多位SER显着增加。虽然逻辑器件（顺序和静态组合器件）的总软错误率没有显着变化，但观察到对α粒子的敏感性大幅增加。最后，介绍了一种从测量的多比特统计数据中提取收集的电荷分布的一维截面的新方法
This work provides a comprehensive summary of radiation-induced soft error rate (SER) scaling trends of key CMOS bulk devices. Specifically we analyzed the SER per bit scaling trends of SRAMs, sequentials and static combinational logic. Our results show that for SRAMs the single-bit soft error rate continues to decrease whereas the multi-bit SER increases dramatically. While the total soft error rate of logic devices (sequentials and static combinational devices) has not changed significantly, a substantial increase in the susceptibility to alpha particles is observed. Finally, a novel methodology to extract one-dimensional cross sections of the collected charge distributions from measured multi-bit statistics is introduced