Defect engineering in MBE grown GaAs based materials
Defect engineering in MBE grown GaAs based materials
复制标题
MBE 生长的砷化镓基材料中的缺陷工程
DOI：
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发表时间：
2000
期刊：
影响因子：
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通讯作者：
E. Weber
中科院分区：
文献类型：
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作者：
P. Specht;M. Cich;R. Zhao;N. D. Jager;J. Gebauer;F. Borner;R. Krause;M. Luysberg;E. Weber
通过引入be受体，可以完全控制MBE低温生长GaAs （LT-GaAs）中的原生点缺陷浓度。获得了近本征电阻率、超高击穿场和超短的载流子寿命。一般来说，be掺杂有利于薄膜的热稳定性。使用与As反位缺陷浓度相似的Be掺杂水平（平衡掺杂）可以达到最大的稳定性。此外，be掺杂LT-GaAs增加的热稳定性可以用于引入和稳定超高be掺杂浓度，从而导致p导电薄膜的空穴浓度达到创纪录的4/spl倍/10/sup / 20/ cm/sup / 3/。目前的工作重点是探讨热稳定和最大Be掺入量增加的可能原因。
Complete control of the native point defect concentration in GaAs grown by MBE at low temperatures (LT-GaAs) can be achieved by the introduction of Be acceptors. Near intrinsic electrical resistivity, ultrahigh breakdown fields, and simultaneously ultrashort carrier lifetimes were obtained. Generally, Be-doping is found to be beneficial for the thermal stability of the epilayers. Maximal stability is reached using Be doping levels similar to the As antisite defect concentration (balanced doping). Additionally, the increased thermal stability of Be-doped LT-GaAs can be utilized to introduce and stabilize ultrahigh Be-doping concentrations which results in p-conductive epilayers with record hole concentrations approaching 4/spl times/10/sup 20//cm/sup 3/. The present work is focused on exploring possible reasons for the thermal stabilization and the increase in maximum Be incorporation.