Molecular beam epitaxy grown (Ga,Mn)(As,P) with perpendicular to plane magnetic easy axis
Molecular beam epitaxy grown (Ga,Mn)(As,P) with perpendicular to plane magnetic easy axis
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DOI：
10.1063/1.2991355
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发表时间：
2008-10-01
影响因子：
3.2
通讯作者：
Gallagher, B. L.
中科院分区：
文献类型：
--
作者：
Rushforth, A. W.;Wang, M.;Gallagher, B. L.
本文研究了分子束外延法在GaAs衬底上生长的Ga0.94Mn0.06As1-yPy层的磁性、电学和结构特性
We present an experimental investigation of the magnetic, electrical, and structural properties of Ga0.94Mn0.06As1-yPy layers grown by molecular beam epitaxy on GaAs substrates for y