Marriage of Scintillator and Semiconductor for Synchronous Radiotherapy and Deep Photodynamic Therapy with Diminished Oxygen Dependence
Marriage of Scintillator and Semiconductor for Synchronous Radiotherapy and Deep Photodynamic Therapy with Diminished Oxygen Dependence
复制标题
闪烁体和半导体的结合用于同步放射治疗和深度光动力治疗,减少氧依赖性
DOI:
10.1002/anie.201408472
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发表时间:
2015-02-02
影响因子:
16.6
通讯作者:
Shi, Jianlin
中科院分区:
文献类型:
--
作者:
Zhang, Chen;Zhao, Kuaile;Shi, Jianlin
Strong oxygen dependence and limited penetration depth are the two major challenges facing the clinical application of photodynamic therapy (PDT). In contrast, ionizing radiation is too penetrative and often leads to inefficient radiotherapy (RT) in the clinic because of the lack of effective energy accumulation in the tumor region. Inspired by the complementary advantages of PDT and RT, we present herein the integration of a scintillator and a semiconductor as an ionizing-radiation-induced PDT agent, achieving synchronous radiotherapy and depth-insensitive PDT with diminished oxygen dependence. In the core-shell Ce-III-doped LiYF4@SiO2@ZnO structure, the downconverted ultraviolet fluorescence from the Ce-III-doped LiYF4 nanoscintillator under ionizing irradiation enables the generation of electron-hole (e(-)-h(+)) pairs in ZnO nanoparticles, giving rise to the formation of biotoxic hydroxyl radicals. This process is analogous to a typeI PDT process for enhanced antitumor therapeutic efficacy.