Direct growth of InAs/GaSb type II superlattice photodiodes on silicon substrates
Direct growth of InAs/GaSb type II superlattice photodiodes on silicon substrates
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DOI：
10.1049/iet-opt.2017.0078
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发表时间：
2018-02-01
影响因子：
1.6
通讯作者：
Wu, Jiang
中科院分区：
文献类型：
--
作者：
Burguete, Claudia Gonzalez;Guo, Daqian;Wu, Jiang
在本研究中，p-i-n InAs/GaSb II型超晶格光电二极管直接生长在硅衬底上。超晶格结构通过10nm的AlSb成核层生长在错切的Si衬底上。采用界面失配阵列技术来适应III-Sb外延层与Si之间的大晶格失配。原子力显微镜和x射线衍射测量表明，与生长在GaAs上的样品相比，生长在Si上的II型超晶格的材料质量有所下降。光致发光表征表明，在峰值强度减少约39%的情况下，光学性能相当。暗电流测量也用于研究样品的电学性质。
In this study, p-i-n InAs/GaSb type II superlattice photodiodes were directly grown on silicon substrates. The superlattice structures were grown monolithically on miscut Si substrates via a 10nm AlSb nucleation layer. Interfacial misfit array technique was used to accommodate the large lattice mismatch between III-Sb epi-layers and Si. Atomic force microscopy and X-ray diffraction measurements revealed degraded material quality of type II superlattices grown on Si, compared with the sample grown on GaAs. Photoluminescence characterisation indicates comparable optical properties with about 39% deduction of peak intensity. Dark current measurements were also used to study the electrical properties of the samples.