Hydride vapor phase epitaxy of AlN : thermodynamic analysis of aluminum source and its application to growth
Hydride vapor phase epitaxy of AlN : thermodynamic analysis of aluminum source and its application to growth
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DOI：
10.1002/pssc.200303360
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发表时间：
2003-12
期刊：
影响因子：
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通讯作者：
Y. Kumagai;Takayoshi Yamane;T. Miyaji;H. Murakami;Y. Kangawa;A. Koukitu
中科院分区：
文献类型：
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作者：
Y. Kumagai;Takayoshi Yamane;T. Miyaji;H. Murakami;Y. Kangawa;A. Koukitu
对氢化物气相外延氮化铝（AlN）过程中金属铝（Al）与氯化氢（HCl）气体反应生成气态氯化铝的过程进行了热力学分析。无论载气中的氢气摩尔分数如何，当Al金属的温度高于790 °C时，氯化铝的主要物质是AlCl，而当温度低于790 °C时，氯化铝的主要物质是AlCl 3。由于AlCl 3与石英（SiO2）的反应性比AlCl低，因此即使使用具有石英反应器的常规系统，也可以使用AlCl 3和NH3进行AlN的HVPE。还报道了在蓝宝石衬底上成功地进行AlN HVPE。（© 2003 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
A thermodynamic analysis of the generation of gaseous aluminum chlorides by the reaction between aluminum (Al) metal and hydrogen chloride (HCl) gas is described for hydride vapor phase epitaxy (HVPE) of AlN. Regardless of the hydrogen mole fraction in the carrier gas, the major species of aluminum chloride is AlCl when the temperature of the Al metal is above 790 °C and is AlCl3 when the temperature is below 790 °C. Since AlCl3 is less reactive with quartz (SiO2) than AlCl, HVPE of AlN is possible using AlCl3 and NH3 even with a conventional system having a quartz reactor. Successful AlN HVPE on sapphire substrates is also reported. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)