Bactericidal effect of a 405-nm diode laser on Porphyromonas gingivalis
Bactericidal effect of a 405-nm diode laser on Porphyromonas gingivalis
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DOI：
10.1002/lapl.200910011
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发表时间：
2009-05-01
影响因子：
1.7
通讯作者：
Ishihara, K.
中科院分区：
文献类型：
--
作者：
Kotoku, Y.;Kato, J.;Ishihara, K.
本研究旨在探讨405 nm半导体激光照射对牙龈卟啉单胞菌等牙周病致病菌的作用。在100 mW-10 sec、100 mW-20 sec、200 mW-5 sec、200 mW-10 sec、200 mW-20 sec、400 mW-5 sec、400 mW-10 sec和400 mW-20 sec的条件下，用405 nm二极管激光器直接照射牙龈卟啉单胞菌的稀释悬浮液。能量密度范围为2.0 - 16.0 J/cm（2）。将经辐照的细菌悬浮液涂布在血琼脂平板上，厌氧培养7天后检查菌落的生长。在所有的照射条件下，细菌的生长被抑制，但405 nm的二极管激光器的杀菌效果取决于能量密度。在能量密度> 4.0 J/cm（2）的辐照下，超过97%的细菌生长受到抑制。杀菌作用的机制是光化学，而不是光热。这些发现表明，405 nm二极管激光对牙龈卟啉单胞菌具有较高的杀菌作用。
The study was conducted to determine the effect of 405-nm diode laser irradiation on periodontopathic bacteria such as Porphyromonas gingivalis in vitro. A diluted suspension of P gingivalis was irradiated directly with a 405-nm diode laser under conditions of 100 mW-10 sec, 100 mW-20 sec, 200 mW-5 sec, 200 mW-10 sec, 200 mW-20 sec, 400 mW-5 sec, 400 mW-10 sec, and 400 mW-20 sec. The energy density ranged from 2.0 to 16.0 J/cm(2). The irradiated bacterial suspension was spread on a blood agar plate and growth of the colonies was examined after an anaerobic culture for 7 days. Bacterial growth was inhibited under all irradiation conditions, but the bactericidal effect of the 405-nm diode laser depended on the energy density. More than 97% of bacterial growth was inhibited with irradiation at an energy density > 4.0 J/cm(2). The mechanism of the bactericidal effect is photochemical, rather than photothermal. These findings suggest that a 405-nm diode laser has a high bactericidal effect on P. gingivalis.