Room-temperature magnetic Heusler compound Fe2Ti0.5Co0.5Si with semiconducting behavior
Room-temperature magnetic Heusler compound Fe2Ti0.5Co0.5Si with semiconducting behavior
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DOI：
10.1016/j.jmmm.2018.11.063
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发表时间：
2019-03
影响因子：
2.7
通讯作者：
Yunlong Jin;Yi Yang;S. Valloppilly;S. Liou;D. Sellmyer
中科院分区：
文献类型：
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作者：
Yunlong Jin;Yi Yang;S. Valloppilly;S. Liou;D. Sellmyer
研究了 Fe2Ti0.5Co0.5Si 的结构、磁性和电子传输性能。结果表明，快速淬火的Fe2Ti0.5Co0.5Si带材结晶为L21结构，为全霍斯勒化合物，并表现出铁磁性，居里温度约为790K；此外，Fe2Ti0.5Co0.5Si表现出半导体行为，具有负电阻率温度系数，室温电阻率约为6.5mΩcm，残余电阻率ρ0约为6.75mΩcm。 5K时载流子浓度为1.15×1020cm−3。具有高居里温度的磁半导体行为使得该材料在室温自旋电子和磁性应用中具有广阔的前景。
The structural, magnetic and electron-transport properties of Fe2Ti0.5Co0.5Si are investigated. It is demonstrated that rapidly quenched Fe2Ti0.5Co0.5Si ribbons crystallize in the L21structure, indicating a full Heusler compound, and exhibit ferromagnetism with a high Curie temperature of about 790 K. Moreover, Fe2Ti0.5Co0.5Si exhibits semiconducting behavior with a negative temperature coefficient of resistivity, a room-temperature resistivity of about 6.5 mΩ cm and a residual resistivity ρ0of about 6.75 mΩ cm. The carrier concentrationnis 1.15 × 1020cm−3at 5 K. The magnetic semiconducting behavior with a high Curie temperature makes this material promising for room-temperature spintronic and magnetic applications.