A novel engineered oxide buffer approach for fully lattice-matched SOI heterostructures
A novel engineered oxide buffer approach for fully lattice-matched SOI heterostructures
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一种用于完全晶格匹配 SOI 异质结构的新型工程氧化物缓冲方法
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
T. Schroeder
中科院分区：
文献类型：
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作者：
A. Giussani;P. Zaumseil;O. Seifarth;P. Storck;T. Schroeder
硅上的外延（epi）氧化物可用于在规范Si平台上集成新的器件概念，包括功能氧化物，例如多铁性，以及替代的半导体方法。对于所有这些应用，氧化物异质结构的质量是一个关键的品质因数。本文采用Y_2O_3和Pr_2O_3粉末材料共蒸发的方法，在Si（111）衬底上生长出了晶格匹配良好的方铁锰矿结构PrYO_3（111）外延层。高分辨率X射线衍射分析表明，混合氧化物外延膜是单晶和B型取向。PrYO 3（111）/Si（111）支撑系统的Si外延过生长导致平坦、连续和完全晶格匹配的epi-Si（111）/PrYO 3（111）/Si（111）绝缘体上硅异质结构。拉曼光谱证明了外延硅薄膜的无应变性质。混合氧化物层的Williamson-Hall分析突出了缓冲层中结构缺陷的存在，这可以通过Si和PrYO 3的热膨胀系数来解释。
Epitaxial (epi) oxides on silicon can be used to integrate novel device concepts on the canonical Si platform, including functional oxides, e.g. multiferroics, as well as alternative semiconductor approaches. For all these applications, the quality of the oxide heterostructure is a key figure of merit. In this paper, it is shown that, by co-evaporating Y2O3 and Pr2O3 powder materials, perfectly lattice-matched PrYO3(111) epilayers with bixbyite structure can be grown on Si(111) substrates. A high-resolution x-ray diffraction analysis demonstrates that the mixed oxide epi-films are single crystalline and type B oriented. Si epitaxial overgrowth of the PrYO3(111)/Si(111) support system results in flat, continuous and fully lattice-matched epi-Si(111)/PrYO3(111)/Si(111) silicon-on-insulator heterostructures. Raman spectroscopy proves the strain-free nature of the epi-Si films. A Williamson–Hall analysis of the mixed oxide layer highlights the existence of structural defects in the buffer, which can be explained by the thermal expansion coefficients of Si and PrYO3.