Bandgap engineering of rippled MoS2 monolayer under external electric field
Bandgap engineering of rippled MoS2 monolayer under external electric field
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外电场作用下波纹状MoS2单层带隙工程
DOI：
10.1063/1.4803803
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发表时间：
2013-04-29
影响因子：
4
通讯作者：
Feng, Ji
中科院分区：
文献类型：
--
作者：
Qi, Jingshan;Li, Xiao;Feng, Ji
本文提出了一种外电场与膜涟漪相结合的调节半导体原子单层带隙的通用策略。通过第一性原理计算，我们发现垂直外电场可以在很大范围内调节波纹状MoS2单层膜的带隙，而对MoS2单层膜的影响很小.这一现象可以用一个简单的模型从外电场作用下的电荷重分布来解释。这可能会打开一个途径，优化单层二硫化钼的电子和光电应用的表面图案化。
In this letter we propose a universal strategy combining external electric field with the ripple of membrane to tune the bandgap of semiconducting atomic monolayer. By first-principles calculations we show that the bandgap of rippled MoS2 monolayer can be tuned in a large range by vertical external electric field, which is expected to have little effect on MoS2 monolayer. This phenomenon can be explained from charge redistribution under external electric field by a simple model. This may open an avenue of optimizing monolayer MoS2 for electronic and optoelectronic applications by surface patterning.