Studies of the perpendicular magnetization mode in Co-Cr sputtered films
Studies of the perpendicular magnetization mode in Co-Cr sputtered films
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Co-Cr溅射薄膜垂直磁化模式的研究
DOI：
10.1109/tmag.1980.1060861
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发表时间：
1980
期刊：
影响因子：
--
通讯作者：
N. Honda
中科院分区：
文献类型：
--
作者：
S. Iwasaki;K. Ouchi;N. Honda
使用最近开发的钴铬薄膜介质研究了垂直磁记录系统的极高分辨率特性。采用苦味技术观察介质中的磁化强度分布，并在薄膜的上下表面直接观察磁化强度的转变。事实证明，即使在超过 40 kBPI 的高记录密度下，也会出现具有非常窄过渡宽度的理想垂直磁化模式。从H c 的角度变化和Co-Cr薄膜的微观结构可以得出结论，该薄膜的高记录分辨率是由于细柱状颗粒表现出伴随垂直磁晶各向异性的磁化反转的旋转机制。还发现 Co-Cr 薄膜的垂直各向异性优于本文研究的任何其他 Co-M 薄膜。
The extremely high resolution properties in a perpendicular magnetic recording system were studied with a recently developed Co-Cr film medium. Bitter technique was used to observe magnetization distribution in the medium, and the transition of magnetization was directly observed on the top and the bottom surfaces of the film. It was proved that an ideal perpendicular magnetization mode, having a very narrow transition width, takes place even in a high recording density over 40 kBPI. From the angular variation of H c and the micro-structure of the Co-Cr film, it was concluded that the high recording resolution of the film results from the fine columnar particles which show the rotational mechanism of magnetization reversal accompanied by a perpendicular magnetocrystalline anisotropy. The Co-Cr film was also found to be superior in perpendicular anisotropy to any other Co-M films studied here in.