Magneto-transport Properties of a GaMnAs-Based Ferromagnetic Semiconductor Trilayer Structure Grown on a ZnMnSe Buffer-猫眼课题宝

在 ZnMnSe 缓冲层上生长的 GaMnAs 基铁磁半导体三层结构的磁输运特性

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发表时间：

2008

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作者：

S. Chung;D. Shin;Hyungchan Kim;Sanghoon Lee;X. Liu;J. Furdyna

研究了生长在ZnMnSe缓冲层上的铁磁GaMnAs/GaAlAs/GaMnAs半导体三层结构的磁输运性质。ZnMnSe缓冲层的存在导致自旋阀状结构的形成，这提供了通过在面内电流（CIP）配置中的霍尔电阻和磁阻（MR）测量来研究自旋散射效应的机会。底部GaMnAs层的居里温度（Tc）和矫顽力被观察到由于铁磁GaMnAs和顺磁ZnMnSe层之间的邻近效应而不同于顶部GaMnAs层的居里温度（Tc）和矫顽力。在霍尔电阻的磁滞回线中观察到两步行为，表明在三层结构中的两个GaMnAs层中的矫顽场是不同的。与霍尔电阻同时测量的磁阻（MR）示出了突然增加的字段区域中的两个GaMnAs层的磁化强度是不同的。虽然在我们的三层结构中观察到的MR比仅为0.04%（由于实验CIP配置），该研究清楚地表明了在ZnMnSe缓冲层上生长的三层铁磁半导体结构中存在自旋散射。

Magneto-transport properties have been investigated in a ferromagnetic GaMnAs/GaAlAs/GaMnAs semiconductor trilayer structure grown on a ZnMnSe buffer layer. The presence of the ZnMnSe buffer leads to the formation of a spin-valve-like structure, which provides the opportunity to investigate spin scattering effects by Hall resistance and magnetoresistance (MR) measurements in the current-in-plane (CIP) configuration. The Curie temperature (Tc) and coercivity of the bottom GaMnAs layer are observed to be different from those of the top GaMnAs layer due to the proximity effect between the ferromagnetic GaMnAs and paramagnetic ZnMnSe layers. A two-step behavior is observed in the hysteresis loops of the Hall resistance, indicating that the coercive fields are different in the two GaMnAs layers in the trilayer structure. The magnetoresistance (MR) measured simultaneously with the Hall resistance shows a sudden increase in the field region where the magnetization of the two GaMnAs layers is different. Although the MR ratio was observed to be only 0.04% in our trilayer structure (due to the experimental CIP configuration), the study clearly demonstrates the presence of spin scattering in a trilayer ferromagnetic semiconductor structure grown on a ZnMnSe buffer.