Vacancy like defects and hardening of tungsten under irradiation with He ions at 800 °C
Vacancy like defects and hardening of tungsten under irradiation with He ions at 800 °C
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800℃氦离子辐照下钨的空位缺陷和硬化
DOI：
10.1016/j.fusengdes.2017.05.043
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发表时间：
2017-10
影响因子：
1.7
通讯作者：
Z.G. Wang
中科院分区：
文献类型：
--
作者：
M.H. Cui;T.L. Shen;H.P. Zhu;J. Wang;X.Z. Cao;P. Zhang;L.L. Pang;C.F. Yao;K.F. Wei;Y.B. Zhu;B.S. Li;J.R. Sun;N. Gao;X. Gao;H.P. Zhang;Y.B. Sheng;H.L. Chang;W.H. He;Z.G. Wang
研究了800 °C下200 keV He离子注入的辐照硬化和类空位缺陷随辐照注量的变化。纳米压痕试验表明，辐照诱导硬化和硬度值的增加与辐照能量密度。对慢正电子湮没的多普勒展宽谱分析发现，在辐照下产生了大量的类空位缺陷。当He/dpa比小于2.2%He/dpa时，类空位缺陷主要包括空空位团和空空位环以及HenVm复合物。当He/dpa比大于2.2%He/dpa时，随着辐照剂量的增加，类空位缺陷主要变为HenVm复合物。同时，这些配合物的尺寸和He/V比增加，随着辐照剂量的增加。基于Orowan硬化机制，讨论了压痕下辐照硬化与缺陷的关系，特别是HenVm复合物对硬化的贡献。
The irradiation induced hardening and vacancy like defects are investigated as a function of irradiation fluences with 200 keV He ion implantation at 800 °C in this work. Nano-indentation tests show the irradiation induces hardening and the hardness values increase with increasing irradiation fluences. Doppler broadening spectroscopy analyses of slow positron annihilation find that a large amount of vacancy like defects are produced under irradiation. When the He/dpa ratio is less than about 2.2% He/dpa, the vacancy like defects include mainly empty vacancy clusters and loops, and HenVmcomplexes. When the He/dpa ratio is more than about 2.2% He/dpa, the vacancy like defects become mainly HenVmcomplexes with increasing irradiation fluences. Meanwhile, these complexes increase in size and He/V ratio while the irradiation fluences increase. Based on the Orowan hardening mechanism, we discuss the relationship between irradiation induced hardening and defects under indentation, especially the contribution of HenVmcomplexes to the hardening.
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影响因子：
3.1
作者：
R. Schäublin;Y. Chiu
通讯作者：
R. Schäublin;Y. Chiu
影响因子：
3.1
作者：
Seung-Cheol Lee;Jung-Hae Choi;June-Gunn Lee
通讯作者：
Seung-Cheol Lee;Jung-Hae Choi;June-Gunn Lee
影响因子：
1.7
作者：
Kasada, Ryuta;Takayama, Yoshiyuki;Kimura, Akihiko
通讯作者：
Kimura, Akihiko
影响因子：
1.6
作者：
X. Yi;M. Jenkins;M. Briceno;S. Roberts;Zhongfu Zhou;M. Kirk
通讯作者：
X. Yi;M. Jenkins;M. Briceno;S. Roberts;Zhongfu Zhou;M. Kirk
DOI：
10.1016/j.nimb.2009.10.176
发表时间：
2010-01
影响因子：
1.3
作者：
A. Debelle;P. Lhuillier;M. Barthe;T. Sauvage;P. Desgardin
通讯作者：
A. Debelle;P. Lhuillier;M. Barthe;T. Sauvage;P. Desgardin