Review: grain boundary faceting–roughening phenomena
Review: grain boundary faceting–roughening phenomena
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DOI：
10.1007/s10853-015-9341-1
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发表时间：
2015
影响因子：
4.5
通讯作者：
B. Straumal;O. Kogtenkova;A. Gornakova;V. Sursaeva;B. Baretzky
中科院分区：
文献类型：
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作者：
B. Straumal;O. Kogtenkova;A. Gornakova;V. Sursaeva;B. Baretzky
与自由表面类似，金属、半导体和绝缘体中的晶界 (GB) 可以包含平坦（多面）和弯曲（粗糙）部分。在大多数情况下，小面平行于由两个邻接晶粒形成的重合位点晶格的最密集平面。随着温度的升高（刻面-粗糙化转变）以及重合误差取向导致的角距离的增加，刻面消失。 GB晶面-粗糙化转变温度TR随着重合位点逆密度Σ的增加而降低。在Σ固定的情况下，TR随着GB平面内重合点密度的减小而减小。小面之间或小面与表面的弯曲（粗糙）部分之间的相交线（脊）可以是一阶（接触点中的两条不同切线）或二阶（公切线、连续过渡）。 GB 的粗糙（弯曲）部分也可以形成一阶粗糙到粗糙的脊（具有两条切线）。晶界晶面控制从正常晶粒生长到异常晶粒生长的转变，并强烈影响晶界迁移、扩散、润湿、断裂和导电性。
Similar to free surfaces, the grain boundaries (GBs) in metals, semiconductors and insulators can contain flat (faceted) and curved (rough) portions. In the majority of cases, facets are parallel to the most densely packed planes of coincidence sites lattice formed by two lattices of abutting grains. Facets disappear with the increasing temperature (faceting–roughening transition) and the increasing angular distance from coincidence misorientation. The temperature of GB faceting–roughening transitionTRdecreases with the increasing inverse density of coincidence sites Σ. In case of fixed Σ,TRdecreases with the decreasing density of coincidence sites in the GB plane. The intersection line (ridge) between facets or between facets and curved (rough) portions of surfaces can be of first order (two different tangents in the contact point) or of second order (common tangent, continuous transitions). The rough (curved) portions of GB can also form the first-order rough-to-rough ridges (with two tangents). GB facets control the transition from normal to abnormal grain growth and strongly influence the GB migration, diffusion, wetting, fracture and electrical conductivity.