Gallium nitride-on-silicon micromechanical overtone resonators and filters
Gallium nitride-on-silicon micromechanical overtone resonators and filters
复制标题
硅基氮化镓微机械泛音谐振器和滤波器
DOI：
--
复制
发表时间：
2011
期刊：
影响因子：
--
通讯作者：
M. Rais
中科院分区：
文献类型：
--
作者：
A. Ansari;V. Gokhale;V. Thakar;J. Roberts;M. Rais
在本文中，我们首次报道了高性能硅基GaN微机械谐振器和滤波器。报道了一种硅基GaN谐振器，其在802.5 MHz下的品质因数为1850，f×Q值是迄今为止报道的GaN基谐振器的最高值的两倍。GaN谐振器的有效耦合系数被提取为1.7%，这是文献中报道的最好的。
In this paper, for the first time, we report on high-performance GaN-on-silicon micromechanical resonators and filters. A GaN-on-silicon resonator is reported which exhibits a quality factor of 1850 at 802.5 MHz, resulting in an f×Q value twice the highest reported for GaN-based resonators to date. The effective coupling coefficient for the GaN resonator is extracted to be 1.7%, which is among the best reported in the literature.