Trapping effects and microwave power performance in AlGaN/GaN HEMTs
Trapping effects and microwave power performance in AlGaN/GaN HEMTs
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DOI：
10.1109/16.906437
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发表时间：
2001-03-01
影响因子：
3.1
通讯作者：
Henry, RL
中科院分区：
文献类型：
--
作者：
Binari, SC;Ikossi, K;Henry, RL
介绍了AlGaN/GaN HEMT的直流、小信号和微波功率输出特性。最大漏电流大于1A/mm，栅-漏击穿电压大于80 V。对于0.4妈妈门长度，30 GHz的f（T）和70 GHz的f（最大）已被证明。讨论了表面层和缓冲层的陷阱效应及其与微波功率性能的关系。结果表明，栅延迟与表面陷阱有关，漏电流崩塌与GaN缓冲层的性质有关。通过减少这些陷阱效应，在3.8 GHz处已经实现了3.3 W/mm的CW功率密度和6.7 W/mm的脉冲功率密度。
The dc, small-signal, and microwave power output characteristics of AlGaN/GaN HEMTs are presented. A maximum drain current greater than 1 A/mm and a gate-drain breakdown voltage over 80V have been attained. For a 0.4 mum gate length, an f(T) of 30 GHz and an f(max) of 70 GHz have been demonstrated. Trapping effects, attributed to surface and buffer layers, and their relationship to microwave power performance are discussed, It is demonstrated that gate lag is related to surface trapping and drain current collapse is associated with the properties of the GaN buffer layer. Through a reduction of these trapping effects, a CW power density of 3.3 W/mm and a pulsed power density of 6.7 W/mm have been achieved at 3.8 GHz.