Preparation of Textured PZT/LaNiO3 Films on LaAlO3 Substrates by Sol-Gel Process
Preparation of Textured PZT/LaNiO3 Films on LaAlO3 Substrates by Sol-Gel Process
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DOI：
10.4028/www.scientific.net/msf.658.85
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发表时间：
2010-07
期刊：
影响因子：
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通讯作者：
Qiannan Liu;G. Zhao;K. Mao;Y. Chen
中科院分区：
文献类型：
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作者：
Qiannan Liu;G. Zhao;K. Mao;Y. Chen
以La（NO3）3·nH 2 O和Ni（CH 3COO）2·4 H2O为原料，乙醇-甲氧基乙醇混合溶剂为溶剂，制备了LaNiO 3（LNO）溶液。用该溶液制备了方块电阻为10Ω的LNO导电薄膜。XRD和HRTEM表明LNO薄膜是在LaAlO 3（LAO）衬底上外延生长的。以Pb（CH 3COO）2·3 H2O、La（NO3）3·nH 2 O、Ti（OC 4 H9）4、Zr（OC 4 H9）4为原料，在LNO薄膜上制备了PZT薄膜。PZT薄膜是c取向的。制备的PZT薄膜的反射极化率为34.7μC/cm 2，上级优于ITO/石英衬底上制备的无规取向PZT薄膜的反射极化率18.4μC/cm 2。
Using La(NO3)3•nH2O and Ni(CH3COO)2•4H2O as starting materials, alcohol mixed with methoxyethanol as solvent, the LaNiO3 (LNO) solution was prepared. Using this solution, conducting LNO films with sheet resistance of 10Ω were obtained. XRD and HRTEM indicate that the LNO films are epitaxially grown on LaAlO3 (LAO) substrates. Using Pb(CH3COO)2•3H2O, La(NO3)3•nH2O, Ti(OC4H9)4, Zr(OC4H9)4 as starting materials, the PZT films were prepared on the LNO films. The PZT films are c-oriented. The as-prepared PZT film has a remanent polarization of 34.7µC/cm2, superior to the PZT film with random orientation and a remanent polarization of 18.4µC/cm2 prepared on ITO/quartz substrate.