Anomalous wear-out phenomena of europium-implanted light emitters based on a metal-oxide-semiconductor structure
Anomalous wear-out phenomena of europium-implanted light emitters based on a metal-oxide-semiconductor structure
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基于金属氧化物半导体结构的铕注入发光体的异常磨损现象
DOI：
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
M. Helm
中科院分区：
文献类型：
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作者：
L. Rebohle;J. Lehmann;S. Prucnal;A. Nazarov;I. Tyagulskii;S. I. Tyagulskii;A. Kanjilal;M. Voelskow;D. Grambole;W. Skorupa;M. Helm
研究了Eu注入金属氧化物半导体器件的异常磨损现象。它将被证明，在其他稀土元素的Eu注入SiO2层的电致发光（EL）的强度相比，可以上升在恒定电流注入之前，已知的EL淬火将开始。在某些情况下，这种上升可能达到两个数量级。电致发光特性与器件的微结构和电学性能密切相关。透射电子显微镜和卢瑟福背散射光谱被施加到跟踪Eu/Eu氧化物团簇的发展和Eu的扩散到栅极氧化层的界面。通过核反应分析确定了SiO2-锡永界面区域内的氢分布。电流-电压特性，EL衰减时间，以及随着增加的电荷注入的电压和EL光谱的进展进行了测量，以研究在氧化物层中的电荷和陷阱现象，以...
The anomalous wear-out phenomena of Eu-implanted metal-oxide-semiconductor devices were investigated. It will be shown that in contrast to other rare earth elements the electroluminescence (EL) intensity of Eu-implanted SiO2 layers can rise under constant current injection before the known EL quenching will start. Under certain circumstances, this rise may amount up to two orders of magnitude. The EL behavior will be correlated with the microstructural and electrical properties of the devices. Transmission electron microscopy and Rutherford backscattering spectroscopy were applied to trace the development of Eu/Eu oxide clusters and the diffusion of Eu to the interfaces of the gate oxide layer. The hydrogen profile within the SiO2–SiON interface region was determined by nuclear reaction analysis. Current-voltage characteristics, EL decay times, and the progression of the voltage and the EL spectrum with increasing charge injection were measured to study charge and trapping phenomena in the oxide layer to ...