Fabrication and lateral electronic transport measurements of gold nanowires
Fabrication and lateral electronic transport measurements of gold nanowires
复制标题
金纳米线的制造和横向电子传输测量
DOI：
10.1063/1.1334914
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发表时间：
2001
影响因子：
4
通讯作者：
H. Nejoh
中科院分区：
文献类型：
--
作者：
U. Ramsperger;T. Uchihashi;H. Nejoh
提出了一种在超高真空下在 Si(111) 表面制备金纳米线的技术及其电子传输特性。采用原子力显微镜接触模式下的镀金压阻悬臂梁生产宽度小至 4 nm 的金线。这种技术允许随意编写模式。对 7 μm 长、4 nm 宽的金线进行的原位电子传输测量显示出明确的金属行为。这种制造方法可能成为下一代纳米级微处理器的关键。
A technique for fabrication of gold nanowires on a Si(111) surface in ultrahigh vacuum and their electronic transport properties are presented. Gold wires with widths as small as 4 nm are produced by using a gold-coated piezoresistive cantilever in atomic force microscope contact mode. This technique allows patterns to be written at will. In situ electronic transport measurements of a gold wire as long as 7 μm and 4 nm wide show unambiguous metallic behavior. This fabrication method could become pivotal within the next generation of nanoscale microprocessors.
影响因子：
64.8
作者：
Ohnishi, H;Kondo, Y;Takayanagi, K
通讯作者：
Takayanagi, K