New Approach for Improvement of Secondary Ion Mass Spectrometry Profile Analysis
New Approach for Improvement of Secondary Ion Mass Spectrometry Profile Analysis
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改进二次离子质谱剖面分析的新方法
DOI：
10.1143/jjap.46.7441
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发表时间：
2007
期刊：
影响因子：
--
通讯作者：
T. Kezai
中科院分区：
文献类型：
--
作者：
M. Boulakroune;A. Oualkadi;D. Benatia;T. Kezai
本文介绍了一种基于部分去卷积和尺度-频率收缩相结合的新方法对二次离子质谱仪(SIMS)谱分析的改进。用Cameca-Ims6f分析了斜入射下硅中掺硼硅的三角层，得到了SIMS的分布。这些分布可以用衰减长度的指数型尾部分布来近似，这是碰撞混合效应的特征。部分去卷积消除了残余离子混合效应。通过在很大程度上收缩轮廓，消除了高频噪声的影响。结果表明，这种方法在不产生伪影和主要由噪声引起的像差的情况下，使深度分辨率有了显着的提高。此外，由于碰撞混合效应引起的三角层的不对称性被完全消除，衰变长度比反褶积前减小了4倍。
In this paper, we describe the improvement of secondary ion mass spectrometry (SIMS) profile analysis by a new approach based on partial deconvolution combined with scale-frequency shrinkage. The SIMS profiles are obtained by analysis of the delta layers of boron doped silicon in a silicon matrix, analyzed using Cameca-Ims6f at oblique incidence. These profiles can be approximated closely by exponential-like tail distributions with decay length, which characterizes the collisional mixing effect. The partial deconvolution removes the residual ion mixing effect. The contributions of high-frequency noise are removed by shrinkage to a great extent of the profiles. It is shown that this approach leads to a marked improvement in depth resolution without producing artifacts and aberrations caused principally by noise. Furthermore, it is shown that the asymmetry of the delta layers, caused by the collisional mixing effect, is completely removed, the decay length is decreased by a factor of 4 compared with that before deconvolution.