Bulk electron traps in zinc oxide varistors
Bulk electron traps in zinc oxide varistors
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DOI：
10.1063/1.337504
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发表时间：
1986-12
影响因子：
3.2
通讯作者：
J. Cordaro;Y. Shim;J. E. May
中科院分区：
文献类型：
--
作者：
J. Cordaro;Y. Shim;J. E. May
用导纳光谱在30 ~ 350 K范围内对三种商用氧化锌压敏电阻材料进行了检测。在频率从1到100千赫观察到交流电导的最大值。该最大值被解释为由位于ZnO - ZnO晶界双肖特基势垒耗尽区内的电子陷阱引起的。在每种物质中都观察到两个圈闭，它们很可能来自同一来源。发现阱能在导带边缘以下分别为0.17和0.33 eV。这些陷阱可能与ZnO中的固有缺陷有关，并可能影响器件特性，如电压过调。
Three types of commercial zinc oxide varistor materials were examined using admittance spectroscopy between 30 and 350 K. Maxima in the ac conductance at frequencies from 1 to 100 kHz are observed. The maxima are interpreted as arising from electron traps located within the depletion regions of double Schottky barriers at ZnO‐ZnO grain boundaries. Two traps are observed in each material and are likely to be from common origin. The trap energies are found to be 0.17 and 0.33 eV below the conduction‐band edge. The traps are likely to be associated with native defects in ZnO and may influence device characteristics such as voltage overshoot.