The striking influence of rapid thermal annealing on InGaAsP grown by MBE: material and photovoltaic device
The striking influence of rapid thermal annealing on InGaAsP grown by MBE: material and photovoltaic device
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快速热退火对 MBE 生长的 InGaAsP 的显着影响：材料和光伏器件
DOI：
10.1016/j.jcrysgro.2016.11.003
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发表时间：
2017-01-15
影响因子：
1.8
通讯作者：
Yang, Hui
中科院分区：
文献类型：
--
作者：
Ji, Lian;Tan, Ming;Yang, Hui
对分子束外延生长的带隙能量为1 eV的InGaAsP太阳电池进行了快速热退火（RTA）。在优化的工艺条件下，采用快速热退火工艺，开路电压从0.45 V提高到0.5 V，光电转换效率从11.87%提高到13.2%，这是由于p型InGaAsP晶体质量的改善，从而降低了耗尽区的复合电流。p型InGaAsP的积分光致发光（PL）强度在800 ℃退火后增加到166倍，其PL衰减时间增加了一个数量级。而名义上未掺杂和n掺杂的InGaAsP的变化可以忽略不计。不同掺杂类型的InGaAsP的RTA效应的不同行为归因于p型InGaAsP中的高移动的“激活剂”-铍（Be）原子。
Rapid thermal annealing (RTA) has been performed on InGaAsP solar cells with the bandgap energy of 1 eV grown by molecular beam epitaxy. With the employment of RTA under an optimized condition, the open voltage was increased from 0.45 to 0.5 V and the photoelectric conversion efficiency was increased from 11.87-13.2%, respectively, which was attributed to the crystal quality improvement of p-type InGaAsP and therefore a reduced recombination current inside depletion region. The integral photoluminescence (PL) intensity of p-type InGaAsP increased to 166 times after annealing at 800 degrees C and its PL decay time increased by one order of magnitude. While the changes of nominally undoped and n-doped InGaAsP were negligible. The different behaviors of the effect of RTA on InGaAsP of different doping types were attributed to the highly mobile "activator" - beryllium (Be) atom in p-type InGaAsP.