Unified description of Dirac electrons on a curved surface of topological insulators
Unified description of Dirac electrons on a curved surface of topological insulators
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DOI：
10.7566/jpsj.82.074712
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发表时间：
2013-03
期刊：
影响因子：
--
通讯作者：
Y. Takane;K. Imura
中科院分区：
文献类型：
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作者：
Y. Takane;K. Imura
由无质量狄拉克方程描述的受保护表面态的存在性是拓扑绝缘体的定义性质。虽然这一说法可以明确地验证一个理想化的平面，它仍然有待解决的程度，它可以是一般的。在曲面上，表面狄拉克方程被自旋联系项修正。在这里，我们给出了一个一般的框架，在光的微分几何构造的表面狄拉克方程开始的哈密顿量的体积拓扑绝缘体。得到的统一描述阐明了自旋联系的物理意义。
Existence of a protected surface state described by a massless Dirac equation is a defining property of the topological insulator. Though this statement can be explicitly verified on an idealized flat surface, it remains to be addressed to what extent it could be general. On a curved surface, the surface Dirac equation is modified by the spin connection terms. Here, in the light of the differential geometry, we give a general framework for constructing the surface Dirac equation starting from the Hamiltonian for bulk topological insulators. The obtained unified description clarifies the physical meaning of the spin connection.