Colloidal InSb Nanocrystals
Colloidal InSb Nanocrystals
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DOI：
10.1021/ja309821j
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发表时间：
2012-12-19
影响因子：
15
通讯作者：
Talapin, Dmitri V.
中科院分区：
文献类型：
--
作者：
Liu, Wenyong;Chang, Angela Y.;Talapin, Dmitri V.
本文报道了III-V半导体家族重要成员InSb单分散纳米晶（NCs）的胶体合成。胶体InSb NC量子点在近红外光谱范围内表现出良好的激子跃迁，3.3 nm和6.5 nm LnSb NC对应的光学带隙分别在1.03 eV （1200 nm）到0.71 eV （1750 nm）之间可调。我们观察到InSb/CdSe或InSb/CdS核壳纳米结构可以显著增强带边光致发光的大小可调。覆有s -2离子的InSb NCs薄膜表现出双极性电荷输运。
We report the colloidal synthesis of monodisperse nanocrystals (NCs) of InSb, which is an important member of III-V semiconductor family. Colloidal InSb NC quantum dots showed well-resolved excitonic transitions in the near-infrared spectral range, with the optical band gaps tunable from similar to 1.03 eV (1200 nm) to similar to 0.71 eV (1750 nm) corresponding to 3.3 and 6.5 nm LnSb NCs, respectively. We observed size-tunable band edge photoluminescence that could be significantly enhanced by growing InSb/CdSe or InSb/CdS core-shell nanostructures. Films of InSb NCs capped with S-2-ions showed ambipolar charge transport.