Improved performance of multilayer InAs/GaAs quantum-dot solar cells using a high-growth-temperature GaAs spacer layer
Improved performance of multilayer InAs/GaAs quantum-dot solar cells using a high-growth-temperature GaAs spacer layer
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使用高生长温度 GaAs 间隔层提高多层 InAs/GaAs 量子点太阳能电池的性能
DOI：
10.1063/1.3686184
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发表时间：
2012
影响因子：
3.2
通讯作者：
Huiyun Liu
中科院分区：
文献类型：
--
作者：
F. Tutu;I. Sellers;M. G. Peinado;C. Pastore;S. Willis;A. Watt;Ting Wang;Huiyun Liu
使用高生长温度的GaAs间隔层被证明可以显着提高多层InAs/GaAs量子点太阳能电池的性能。在低温（510 °C）下生长的具有GaAs间隔层的30层量子点结构中观察到穿透位错。通过在高温（580 °C）下生长GaAs间隔层来抑制穿透位错的形成，从而增强量子点光学和结构特性。将高生长温度GaAs间隔层并入到30层InAs/GaAs量子点太阳能电池中导致与没有高生长温度间隔层的太阳能电池相比短路电流急剧增加，并且与参考GaAs太阳能电池相比短路电流增加。
The use of high-growth-temperature GaAs spacer layers is demonstrated to significantly enhance the performance of multilayer InAs/GaAs quantum-dot solar cells. Threading dislocations are observed for a 30-layer quantum-dot structure with GaAs spacer layers grown at low temperature (510 °C). The formation of threading dislocations is suppressed by growing the GaAs spacer layer at high temperature (580 °C), leading to enhanced quantum-dot optical and structural characteristics. Incorporation of the high-growth-temperature GaAs spacer layers into a 30-layer InAs/GaAs quantum-dot solar cell results in a dramatic increase in the short-circuit current compared to the one without the high-growth-temperature spacer layers and an increase in the short-circuit current compared to the reference GaAs solar cell.