Effects of post-annealing on thermoelectric properties of p-type CoSb3 grown by the vertical Bridgman method
Effects of post-annealing on thermoelectric properties of p-type CoSb3 grown by the vertical Bridgman method
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DOI：
10.1016/j.jallcom.2004.04.144
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发表时间：
2005-01-11
影响因子：
6.2
通讯作者：
Sakuragi, S
中科院分区：
文献类型：
--
作者：
Akasaka, A;Iida, T;Sakuragi, S
采用垂直布里奇曼法生长了方钴矿化合物CoSb_3晶体，生长速度为0.4 ~ 2.8mm/h。在生长参数的变化导致的多晶的p型CoSb 3颗粒周围的Sb金属的形成。为了去除生长态晶体中过量的Sb，进行后退火。通过后退火过程去除残留的Sb引起CoSb 3晶粒外部的重构和晶体中空隙的形成，导致Seebeck系数从约40 μ V/K（在生长态样品中）增加到250-500 μ V/K。退火后的样品的塞贝克系数的增加值高于单晶体CoSb 3与相应的载流子浓度。(C)2004 Elsevier B. V.保留所有权利。
Crystals of CoSb3, a peritectic skutterudite compound, were grown by the vertical Bridgman method at various growth speeds ranging from 0.4 to 2.8 mm/h. Changes in the growth parameters resulted in the formation of polycrystalline p-type CoSb3 grains surrounded by Sb metal. To remove the excess Sb in the as-grown crystals, post-annealing was performed. Removing the residual Sb through the post-annealing process caused reconstruction of CoSb3 grain externals and formation of voids in the crystals, resulting in an increase in the Seebeck coefficient from around 40 muV/K (in as-grown samples) to 250-500 muV/K. The increased Seebeck coefficient values of the post-annealed samples are higher than that of single-crystal bulk CoSb3 with the corresponding carrier concentration. (C) 2004 Elsevier B.V. All rights reserved.