Formation of AlCuFe quasicrystalline thin films by solid state diffusion
Formation of AlCuFe quasicrystalline thin films by solid state diffusion
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固态扩散形成 AlCuFe 准晶薄膜
DOI：
10.1063/1.111944
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发表时间：
1994
影响因子：
4
通讯作者：
O. Symko
中科院分区：
文献类型：
--
作者：
T. Klein;O. Symko
我们表明，薄膜厚度为3000埃的二十面体AlCuFe相可以通过溅射Al，Cu和Fe层的固态扩散形成。对于块体材料，我们提出，二十面体相生长的扩散的Cu在Al3Fe层先前形成的Al和Fe层的相互扩散。这些膜呈现出与在高结构质量的体样品中获得的那些相媲美的高电阻率值。
We show that thin films 3000 A in thickness of the icosahedral AlCuFe phase can be formed by solid state diffusion of sputtered Al, Cu, and Fe layers. As for bulk materials, we propose that the icosahedral phase grows by diffusion of the Cu in the Al3Fe layer previously formed by interdiffusion of the Al and Fe layers. These films present high resistivity values comparable to those obtained in bulk samples of high structural quality.