Fabrication and Characterization of High-Current-Gain 4H-SiC Bipolar Junction Transistors
Fabrication and Characterization of High-Current-Gain 4H-SiC Bipolar Junction Transistors
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DOI：
10.1109/ted.2008.926670
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发表时间：
2008-07
影响因子：
3.1
通讯作者：
Jianhui Zhang;Xueqing Li;P. Alexandrov;L. Fursin;Xiaohui Wang;J.H. Zhao
中科院分区：
文献类型：
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作者：
Jianhui Zhang;Xueqing Li;P. Alexandrov;L. Fursin;Xiaohui Wang;J.H. Zhao
本文报道了新开发的高性能4 H-SiC双极结型晶体管（BJT），具有改善的电流增益和功率处理能力的基础上，有意设计的连续生长的4 H-SiC BJT晶片。测得的直流共发射极电流增益高达70，比导通电阻（RSP-ON）低至3.0 mOmOmegamiddotcm 2，开基击穿电压（VCEO）达到1750 V。已成功地将4.1 × 4.1 mm的大面积4 H-SiC BJT封装成高增益的（β = 50.8）高功率（80 A × 700 V）全SiC copack，并在高达250 ℃的高温下进行了评估。小型4 H-SiC BJT已经在100 A/cm 2的连续集电极电流密度下进行了24 h的应力测试，并且首次显示出没有明显的正向电压漂移和电流增益退化。数值模拟和实验结果证实，4 H-SiC BJT可以同时获得高电流增益和高开基击穿电压。
This paper reports on newly developed high-performance 4H-SiC bipolar junction transistors (BJT) with improved current gain and power handling capabilities based on an intentionally designed continuously grown 4H-SiC BJT wafer. The measured dc common-emitter current gain is as high as 70, the specific ON-state resistance (RSP-ON) is as low as 3.0 mOmegamiddotcm2, and the open-base breakdown voltage (VCEO) reaches 1750 V. Large-area 4H-SiC BJTs with a footprint of 4.1 times 4.1 mm have been successfully packaged into a high-gain (beta = 50.8) high-power (80 A times 700 V) all-SiC copack and evaluated at high temperature up to 250degC. Small 4H-SiC BJTs have been stress tested under a continuous collector current density of 100 A/cm2 for 24 h and, for the first time, have shown no obvious forward voltage drift and no current gain degradation. Numerical simulations and experimental results have confirmed that simultaneous high current gain and high open-base breakdown voltage could be achieved in 4H-SiC BJTs.