極清浄雰囲気中で作製したAg-Co薄膜の構造とGMR効果 : Cu-Co薄膜との比較
極清浄雰囲気中で作製したAg-Co薄膜の構造とGMR効果 : Cu-Co薄膜との比較
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极洁净气氛下制备的Ag-Co薄膜的结构和GMR效应：与Cu-Co薄膜的比较
DOI：
10.3379/jmsjmag.23.1341
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发表时间：
1999
影响因子：
--
通讯作者：
研三 高橋
中科院分区：
文献类型：
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作者：
匡清 角田;大輔 高橋;秀登 岡原;研三 高橋
溅射气氛中杂质对Ag_（100-x）Co_x薄膜微结构和巨磁电阻效应的影响（x = 0- 62at%）薄膜的研究。在室温下在石英衬底上制备了Ag-Co薄膜，通过改变基压来改变溅射气氛的纯度，对于极清洁工艺（XC工艺）为10-11托，对于较低等级工艺（LG工艺）为10-7托。讨论了退火后Ag-Co薄膜的微结构与巨磁电阻之间的关系。结果表明：（1）在沉积态薄膜中，Co颗粒的析出在进行，LG处理的薄膜中基体相的过饱和程度高于XC处理的薄膜;（2）LG处理后的薄膜中析出的Co粒子的尺寸大于XC处理后的薄膜中析出的Co粒子的尺寸，在最大外加电场为14 kOe时，LG处理的薄膜比XC处理的薄膜具有更高的MR比;（3）在300°C以上退火后，XC处理的薄膜的MR比大于LG处理的薄膜，这显然是由于沉淀物中Co颗粒的均匀性。
The influence of impurities in the sputtering atmosphere on the microstmcture and giant magnetoresistance (GMR) of Ag100-xCox (x = 0-62 at%) thin films was investigated Ag-Co films were prepared on quartz substrates at room temperature, varying the purity of the sputtering atmosphere by changing the base pressure, with 10-11 Torr for an extremely clean process (XC-process) and 10-7 Torr for a lower-grade process (LG-process). The correlation between the microstructure and the GMR of Ag-Co films after annealing is discussed It was found that (1) the precipitation of Co particles progressed in the as-deposited films, and the degree of supersaturantion of the matrix phase in the LG-processed films was higher than that in the XC-processed films; (2) the size of the Co particles precipitated in the as-deposited LG-processed films was larger than that in the XC-processed films, and resulted in a higher MR ratio of the as-deposited LG-processed films than that of the XC-processed ones under a maximum applied field of 14 kOe; (3) the magnitude of the MR ratio in the XC-processed films after annealing above 300°C was larger than that in the LG-processed ones, apparently because of the homogeneity of the Co particles of the precipitate.