Influence of implant number on the movement of mandibular implant overdentures
Influence of implant number on the movement of mandibular implant overdentures
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DOI:
10.1016/j.prosdent.2016.08.005
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发表时间:
2017-03-01
影响因子:
4.6
通讯作者:
Minakuchi, Shunsuke
中科院分区:
文献类型:
--
作者:
Oda, Ken;Kanazawa, Manabu;Minakuchi, Shunsuke
Statement of problem. The rotational movement of an implant overdenture (IOD) has a negative effect on the perceived masticatory ability of the denture wearer. However, the influence of implant number on the movement of IODs has not been investigated.Purpose. The purpose of this in vitro study was to evaluate the denture movement of mandibular IODs anchored by different numbers of implants.Material and methods. An edentulous mandibular test model with artificial mucosa and 5 experimental overdentures (N=5) was fabricated. The locator attachment system with blue nylon inserts was chosen for this study. Three implant positions were prepared: anterior midline (1-IOD), bilateral lateral incisor regions (2-IOD), and anterior midline and bilateral canine regions (3-IOD). Vertical loads of 50 N were applied to the mid-anterior region, the left canine region, the left premolar region, and the left first molar region. The vertical and horizontal displacements at the right distal edge and the vertical displacements at the loading point were measured. The displacement values were statistically analyzed using a 1-way analysis of variance and the post hoc Tukey honest significant difference test with the implant number as a factor. In addition, the values of the vertical and horizontal displacements at the distal edge of the overdenture were statistically compared using a paired t test, and the values of the vertical displacement at the distal edge of the overdenture were statistically analyzed by a repeated measures analysis of variance and the post hoc Tukey honest significance difference test with the loading point as a 'factor (a=.05).Results. Upon anterior loading, the 2-IOD showed significantly larger vertical displacements at the right distal edge than the 1-IOD or 3-IOD (P