AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources
AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources
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DOI：
10.1063/1.3291101
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发表时间：
2010-01-15
影响因子：
3.2
通讯作者：
Skierbiszewski, C.
中科院分区：
文献类型：
--
作者：
El Fatimy, A.;Dyakonova, N.;Skierbiszewski, C.
我们报道了一种亚微米尺寸的AlGaN/ gan基高电子迁移率晶体管在室温下产生太赫兹。发射峰在0.75 ~ 2.1太赫兹栅极电压范围内可调。辐射频率对应于晶体管通道门控区域的最低基频等离子体模式。发射以类似阈值的方式出现在一定的漏偏置处。观测到的发射被解释为门控二维电子气体中Dyakonov-Shur等离子体波不稳定性的结果。
We report on room temperature terahertz generation by a submicron size AlGaN/GaN-based high electron mobility transistors. The emission peak is found to be tunable by the gate voltage between 0.75 and 2.1 THz. Radiation frequencies correspond to the lowest fundamental plasma mode in the gated region of the transistor channel. Emission appears at a certain drain bias in a thresholdlike manner. Observed emission is interpreted as a result of Dyakonov-Shur plasma wave instability in the gated two-dimensional electron gas.